71812 tkim/52703 tsim ta-100152 no.7519-1/7 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 50C02SS bipolar transistor 50v, 0.4a, low v ce ( sat ) npn single ssfp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? low-frequency amplifer, high-speed switching small motor drive, muting circuit features ? large current capacity ? low collector-to-emitter saturation voltage (resistance) : r ce (sat) typ=175m [i c =0.5a, i b =50ma] ? ultrasmall package facilitates miniaturization in end products ? small on-resistance (ron) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 60 v collector-to-emitter voltage v ceo 50 v emitter-to-base voltage v ebo 5v collector current i c 400 ma collector current (pulse) i cp 800 ma collector dissipation p c mounted on a glass-epoxy board (20 30 1.6mm) 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7029a-002 ordering number : en7519a product & package information ? package : ssfp ? jeita, jedec : sc-81 ? minimum packing quantity : 8,000 pcs./reel packing type: tl marking electrical connection tl yn lot no. lot no. 3 2 1 1 : base 2 : emitter 3 : collector ssfp 1 3 12 2 3 1.4 1.4 0.3 0.3 0.8 0.6 0.07 0.07 0 to 0.02 0.25 0.2 0.45 0.1 50C02SS-tl-e
50C02SS no.7519-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =40v, i e =0a 100 na emitter cutoff current i ebo v eb =4v, i c =0a 100 na dc current gain h fe v ce =2v, i c =10ma 300 800 gain-bandwidth product f t v ce =10v, i c =50ma 500 mhz output capacitance cob v cb =10v, f=1mhz 2.8 pf collector-to-emitter saturation voltage v ce (sat) i c =100ma, i b =10ma 50 100 mv base-to-emitter saturation voltage v be (sat) i c =100ma, i b =10ma 0.9 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 60 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 5 v turn-on time t on see speci ed test circuit. 30 ns storage time t stg 340 ns fall time t f 55 ns switching time test circuit ordering information device package shipping memo 50C02SS-tl-e ssfp 8,000pcs./reel pb free v r r b v cc =25v v be = --5v ++ 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =200ma
50C02SS no.7519-3/7 h fe -- i c it05108 i c -- v ce it05106 i c -- v be it05107 collector-to-emitter voltage, v ce -- mv collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe 1.0 10 100 1000 3 257 3 257 3 257 1000 100 10 2 3 5 7 2 3 5 7 0 0 350 400 300 200 250 500 450 200 150 100 50 0 200 300 600 500 400 100 500 1000 800 900 100 300 400 600 700 0 0.2 0.4 0.6 0.8 1.2 1.0 ta=75 c --25 c 25 c v ce =2v v ce =2v i b =0 200 a 600 a 1ma 2ma 3ma 5ma 7ma 8ma 30ma 20ma 15ma 10ma ta=75 c 25 c - -25 c it05411 1.0 23 5 10 100 72357 1000 23 57 2 5 7 5 7 3 2 100 3 10 --25 c 25 c ta=75 c i c / i b =10 v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv cob -- v cb it05112 v ce (sat) -- i c it05110 collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma output capacitance, cob -- pf collector-to-base voltage, v cb -- v it05111 v be (sat) -- i c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v 27 35 2 7 35 10 100 1.0 10 1.0 7 5 3 2 1.0 23 5 357 10 272357 100 1000 10 1.0 0.1 7 5 3 2 7 5 3 2 75 c ta= - -25 c 25 c i c / i b =20 f=1mhz it05110 1000 2 3 100 7 5 2 3 7 5 10 1.0 23 5 10 100 7 23 5 7 23 5 7 1000 i c / i b =50 --25 c 25 c ta=75 c v ce (sat) -- i c it05109 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv 1.0 23 5 10 100 72357 1000 23 57 2 5 7 3 2 100 3 10 --25 c 25 c ta=75 c i c / i b =20
50C02SS no.7519-4/7 f t -- i c it05113 collector current, i c -- ma gain-bandwidth product, f t -- mhz 0 0 20 40 60 80 100 120 200 150 100 50 250 140 160 p c -- ta it05114 collector dissipation, p c -- m w ambient temperature, ta -- c 1.0 5 3 100 1000 7 5 3 2 1000 100 27 5 3 27 5 3 27 10 v ce =10v base current, i b -- m a ron -- i b on resistance, ron -- f=1mhz 0.1 0.1 it06092 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 1.0 10 out in 1k 1k i b mounted on a glass-epoxy board(20 ? 30 ? 1.6mm)
50C02SS no.7519-5/7 embossed taping speci cation 50C02SS-tl-e
50C02SS no.7519-6/7 outline drawing land pattern example 50C02SS-tl-e mass (g) unit 0.0018 * for reference mm unit: mm 0.5 0.5 0.45 0.45 0.45 0.45 1.2
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